In-Line Characterization of Heterojunction Bipolar Transistor Base Layers by High-Resolution X-Ray Diffraction
نویسندگان
چکیده
منابع مشابه
In-Line Characterization of Heterojunction Bipolar Transistor Base Layers by High-Resolution X-Ray Diffraction
The suitability of high-resolution X-ray diffraction (HRXRD) as an in-line measurement tool for the characterization of heterojunction bipolar transistor SiGe base layers and Si cap layers was investigated. We showed that despite of polycrystalline Si on the mask material of patterned wafers, HRXRD measurements performed on an array of small windows yield results which are comparable to those t...
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ACKNOWLEDGEMENTS I am deeply indebted to Dr. John D. Cressler for his patience, guidance, and support throughout my master's program. My inspiration came from his passion for research and his confidence in my abilities. Working under his leadership in such an exciting field was both educationally and professionally enriching. I would also like to thank the other members of my thesis advisory co...
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ژورنال
عنوان ژورنال: ECS Transactions
سال: 2019
ISSN: 1938-6737
DOI: 10.1149/1.2773985